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  1 / 5 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 2010 as w216 5 - 40 00 mhz mmic amplifier parameters units typical frequency mhz 900 2000 gain db 14 11.8 s11 db - 14 - 14 s22 db - 15 - 14 output ip3 1) dbm 37.5 38 noise figure db 2.2 2.4 output p1db dbm 20 20 current ma 80 80 device voltage v 4.5 4.5 1) oip3 i s measured with two tones at an output power of +5 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 900 gain db 13 14 s11 db - 14 s22 db - 15 output ip3 dbm 36 37.5 noise figure db 2.2 2.6 output p1db dbm 19 20 current ma 70 80 110 device voltage v 4.5 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( cw, 50ohm matched)* 25 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf feature s description absolute maximum ratings 14 db gain at 900 mhz 20 dbm p1db at 900 mhz 37.5 dbm oip3 at 900 mhz 2.2 db nf at 900 mhz mttf > 100 years single supply th e ASW216, a power amplifier mmic, has a high linearity , high gain, and high efficiency over a wide range of frequency, being suitable for use in both r e- ceiver and transmitter of telecommunication systems up to 4 ghz. the amplifier is available in a n sot - 89 package and passes through the stringent dc, rf, and reliability tests. product specifications typical perfor m ance ASW216 package style: sot - 89 application circuit 500 ~ 3500 mhz pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 5 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 2010 as w216 5 - 40 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is critical for therm al and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4. 25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as w216 pxxxx lot no. part no. part number description ordering information
3 / 5 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 2010 as w216 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +5 dbm/tone(at 4.5v) / - 5 dbm/tone(at 3v) separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) s - parameters & k - factor application circuit frequency (mhz) 900 2000 900 2000 magnitude s21 (db) 14 11.8 13 11 magnitude s11 (db) - 14 - 14 - 12 - 10 magnitude s22 (db) - 15 - 14 - 15 - 12 output p1db (dbm) 20 20 16 15 output ip3 1) (dbm) 37.5 38 23 24 noise figure (db) 2.2 2.4 2.2 2.4 device voltage (v) 4.5 3 current (ma) 80 35 500 ~ 3500 mh z +4.5 v / +3 v schematic 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=39 nh c2=100 pf vcc=4.5 v rf in rf out c3=100 pf c4=1 m f ASW216 d1=5.6v zener diode l2=39 nh 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c
4 / 5 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 2010 as w216 5 - 40 00 mhz mmic amplifier p1db vs. temperature current vs. temperature output ip3 vs. tone p ower (frequency = 2000 mhz) output ip3 vs. temperature gain vs. temperature -60 -40 -20 0 20 40 60 80 100 60 70 80 90 100 110 current (ma) temperature ( o c) -60 -40 -20 0 20 40 60 80 100 6 8 10 12 14 16 18 gain (db) temperature ( o c) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 14 16 18 20 22 24 26 p1db (dbm) temperature ( o c) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 28 32 36 40 44 48 output ip3 (dbm) temperature ( o c) frequency = 2000 mhz -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 15 20 25 30 35 40 45 50 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
5 / 5 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 february 2010 as w216 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1 mhz. perfor m ance with varying v device v d e vice (v) cu r rent (ma) freq. (mhz) gain (db) s11 (db) s22 (db) oip3 1) (db m ) p1 db (dbm) nf (db) 4.5 81 900 14.1 - 14.5 - 18 37.9 20.6 2.05 2000 11.6 - 13.9 - 12.5 38 19.7 2.33 4.2 66 900 14 - 14.3 - 18.1 36 19.7 2.12 2000 11.6 - 13.7 - 12.1 36 18.8 2.35 3.75 49 900 13.8 - 14 - 18.1 31.9 17.8 2.17 2000 11.4 - 13.4 - 12.4 32.3 17.3 2.3 3.2 35 900 13.4 - 13.3 - 17.7 26 15.8 2.24 2000 11.1 - 12.9 - 12.3 27.5 15.1 2.23


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